HIGH-VOLTAGE SYMMETRICAL SEMICONDUCTOR VOLTAGE LIMITER Russian patent published in 2003 - IPC

FIELD: designing semiconductor voltage limiters having low dynamic resistance. SUBSTANCE: proposed device has n identical series-connected low-voltage symmetrical p-n-p or n- p-n voltage limiters whose quantity (n) is found from expression , where U_BRmin/o is minimal breakdown voltage of device; r_r.d.l is dynamic resistance of single-component voltage limiter with minimal breakdown voltage equal to U_BRmin/o; I_RSM is maximal permissible amplitude of nonrepetitive reverse pulsed current that can be passed through voltage limiter during its operation; U_perm is maximal permissible voltage that can be built up across voltage limiter when it carries current I_RSM.. Minimal breakdown voltage U_BRmin of each on n series-connected low-voltage symmetrical p-n-p or n-p-n voltage limiters is found in this case from expression . EFFECT: reduced dynamic resistance of high- voltage symmetrical voltage limiters. 1 cl, 3 dwg