METHOD FOR HIGH-VOLTAGE POWER SEMICONDUCTOR DEVICE FABRICATION Russian patent published in 2012 - IPC H01L21/328 

FIELD: electricity.

SUBSTANCE: method for fabrication of high-voltage power semiconductor device includes fabrication, on initial silicon slab, of conic edge skew at angle β and diffused layer forming high-voltage plate-shaped p-n barrier consisting of conic peripheral part and flat central part; creation of subsequent diffused layers and electrodes; fabrication, by grinding on spheres, of straight chamfer at angle α exceeding angle β and straight chamfer for removing part of conic portion of base p layer. In this process, straight chamfer for removing part of conic portion of base p layer is fabricated by grinding on sphere of the same radius which is used for fabrication of skew on initial slab. Width of conic edge skew b_es can be chosen from presented formula.

EFFECT: higher avalanche breakdown voltage of p-n barriers with straight chamfer.

2 cl, 6 dwg, 1 tbl