MONOCRYSTALS, METHOD OF PRODUCTION OF MONOCRYSTALS BY GROWTH IN SOLUTION AND VERSIONS OF APPLICATION Russian patent published in 2006 - IPC C30B7/00 C30B29/14 C30B33/00 

FIELD: production if monocrystals.

SUBSTANCE: production of tetragonal monocrystal at composition of Z(H,D)₂MO₄, where Z is element of group of elements or mixture of elements and/or group of elements selected from group, K,N (H,D)4, Rb, Ce, where M is element selected from group P, As and (H,D) is hydrogen or deuterium which may be used for manufacture of optical components for lasers, for example. Proposed monocrystal contains practically parallelepiped zone of large size whose sizes AC1, AC2 and AC3 of each edge of faces exceed or are equal to 100 mm, exceed or are equal to 200 or 500 mm obtained by growing the crystal in solution from practically parallelepiped monocrystal seed whose edges have sizes AG1, AG2 and AG3. Size AG1 of at least one edge of seed exceeds or is equal to 1/10, preferably of size of edge of monocrystal face and other size of seed AG3 is lesser than or is equal to 1/5, preferably to 1/10 of maximum size of edges of seed.

EFFECT: possibility of production of blanks of large sizes; increased yield of plates in cutting.

26 cl, 5 dwg