SEMICONDUCTOR RADIATION DETECTING COMPONENT Russian patent published in 2006 - IPC G01T1/24 H01L31/296 H01L31/108

Abstract RU 2281531 C2

FIELD: nuclear medicine, radiation diagnostics, astronomy, physics of cosmic rays, etc.

SUBSTANCE: proposed Schottky-barrier semiconductor radiation detecting component has semiconductor connection chip incorporating cadmium and tellurium as basic elements and means for applying voltage to semiconductor connection chip. Mentioned voltage application means has indium, cadmium, and tellurium compound In_xCd_yTe_z formed on one surface of semiconductor connection chip.

EFFECT: eliminated polarization effect due to better electrode configuration.

3 cl, 6 dwg, 4 ex

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RU 2 281 531 C2

Authors

Morijama Miki

Murakami Masaki

Kian Atsusi

Okhno Rioiti

Dates

2006-08-10—Published

2002-04-11—Filed