X-RAY DETECTOR Russian patent published in 2013 - IPC H01L31/115 H01L27/146 

FIELD: physics.

SUBSTANCE: working volume of the detector is made from a plate of semi-insulating monocrystalline semiconductor material, e.g., gallium arsenide, on which capacitors are formed, the first plate of the capacitors lying directly on the working volume. The top of the capacitors is coated with a layer of a separating dielectric, and electronic switches based on field-effect transistors are formed on the layer of the separating dielectric on which is also formed the whole layout of circuits, including buses which connect transistor gates (located on the separating dielectric) along the rows of a matrix, as well as buses which connect transistor drains along columns, wherein windows are formed in the dielectric layer, the windows being filled with metal and the first capacitor plates are connected to transistor sources and second capacitor plates are connected to ground buses in each matrix element through said windows.

EFFECT: widening the range of semiconductor materials suitable for use as the working volume of the detector.

1 dwg