FIELD: optical electronics, in particular, engineering of devices, transforming beam energy to electrical energy, possible use for measuring light level, intensiveness of radiation, dose of ultraviolet radiation in agro-industrial complex and as sensor for determining concentration of ozone in atmospheric layer of Earth.
SUBSTANCE: method includes applying photo-sensitive layer of organic semiconductor onto substrate of non-organic semiconductor and positioning of these between electrodes, one of which is semi-transparent. As non-organic semiconductor, n-type gallium arsenide is utilized (n-GaAs), and as organic semiconductor, thin layer of copper phthalocyanine of p-type is applied, between layer of n-type and layer of p-type, layer of native semiconductor is positioned (i-layer).
EFFECT: increased photo-sensitivity in photo-EMF in wave length range 400÷500 nanometers.
1 dwg
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