FIELD: semiconductor electronics. SUBSTANCE: method that can be used in optoelectronics and photo-power engineering employing polarimetric photodetectors includes illumination of photodetector surface based on gallium arsenide and organic semiconductors; illumination is made linearly by polarized white light at angle of 70-80 deg. to its surface. EFFECT: enhanced photosensitivity with respect to photo EMF and short-circuit current. 1 cl, 2 dwg, 1 ex
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Authors
Dates
2003-06-10—Published
2001-10-16—Filed