METHOD FOR ENHANCING PHOTOSENSITIVITY OF HETEROJUNCTION PHOTODETECTOR Russian patent published in 2003 - IPC

Abstract RU 2206148 C1

FIELD: semiconductor electronics. SUBSTANCE: method that can be used in optoelectronics and photo-power engineering employing polarimetric photodetectors includes illumination of photodetector surface based on gallium arsenide and organic semiconductors; illumination is made linearly by polarized white light at angle of 70-80 deg. to its surface. EFFECT: enhanced photosensitivity with respect to photo EMF and short-circuit current. 1 cl, 2 dwg, 1 ex

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RU 2 206 148 C1

Authors

Fedorov M.I.

Cherednik A.M.

Maksimov V.K.

Kornejchuk S.K.

Dates

2003-06-10Published

2001-10-16Filed