FIELD: physics.
SUBSTANCE: semiconductor photoelectric generator is in form of a contact-switched array of micro-photocells, one or two linear dimensions of which are comparable with diffusion distance of minority charge carriers in the base region with p- or n-type conduction, and the planes of p-n junctions and isotype junctions are perpendicular to the working surface of the generator. The p-n junctions and isotype junctions are in form of a heterojuction with a wide-zone n+ or (p+) layer with an interlayer of tunnel-thin wide-zone film having intrinsic conduction. The entire working surface is coated with an antireflecting, passivating film with up to 5% hydrogen content. The invention also discloses a method of making semiconductor photoelectric generators.
EFFECT: high efficiency and low cost of making photoelectric generators consisting of multiple micro-photocells.
5 cl, 1 dwg, 1 ex
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