METHOD OF MULTI-ELEMENT ION IMPLANTATION (VERSIONS) Russian patent published in 2006 - IPC C30B31/22 H01L21/265 

FIELD: doping of solid bodies by radiation of ion beam from phase-forming atoms; structural and phase modification of solid bodies for enhancing their physico-mechanical, corrosion-resistant and other important properties.

SUBSTANCE: two versions are proposed for realization of this method for forming on surface of object to be subjected to radiation multi-element beam at difference of ratio of ion mass to charge not exceeding 10% for each ion. According to first version, multi-element plasma of high-charge ions is formed in chamber of one source which is connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions is extracted from plasma with the aid of electric field formed by constant accelerating voltage and this beam is directed to magnetic separator which separates ion components of phase-forming atoms at difference in ratio of ion mass to its charge not exceeding 10% scanning over surface of object to be subjected to ration by this beam. According to second version, multi-element plasma of high-charge ions is formed in chamber of source connected with at least two autonomous dosimeters of phase-forming atoms. Multi-element beam of multi-charge ions at respective energies is extracted with the aid of electric field formed by modulator of accelerating voltage amplitude; this field changes in amplitude periodically and successively. Ions accelerated periodically and successively for selected energies are directed to object to be subjected to radiation though magnetic separator.

EFFECT: enhanced efficiency of ion doping; reduction of time required for radiation.

3 cl, 3 dwg