FIELD: physics.
SUBSTANCE: ion implantation method involves formation of plasma inside a working chamber and supplying pulsed acceleration voltage. According to the invention, implantation is carried out from pulsed laser plasma containing multicharged ions. Pulsed acceleration voltage is applied either across a substrate or across a target, wherein the delay between the laser pulse and the pulse of acceleration voltage is determined using a calculation formula which links the distance from the target to the substrate, the centre-of-mass velocity of components with maximum charge, temperature of the ion components with maximum charge, mass and Boltzmann constant.
EFFECT: wider range of implanted substances and selective implantation of muticharged ions.
4 cl, 2 ex
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