METHOD OF THERMAL TREATMENT OF MONOCRYSTALS OF LANTHANUM-GALLIUM SILICATE Russian patent published in 2006 - IPC C30B33/02 C30B29/34 C30B15/02 

Abstract RU 2287621 C1

FIELD: electronic industry; methods of production of the crystals with the triclinic crystal system.

SUBSTANCE: the invention is pertaining to the method of production of the crystals with the triclinic crystal system. Substance of the invention: the monocrystals of lanthanum-gallium silicate grown in compliance with Czochralski method from the iridium crusible are subjected to the two-stage thermal treatment. The monocrystals are preliminary subjected to the vacuum annealing at the pressure of 1·10-2 -1·10-4Pa and the temperature of 600-1200°C within 0.5-10 hours, and then conduct their isothermal air aging at the temperature of 300-350°C within 0.5-48 hours. The invention allows reproducibly produce the discolored monocrystals of lanthanum-gallium silicate and also to speed up propagation of the surface-acoustic waves (SAW) by 1-1.5 m\s at the simultaneous decrease of dispersion of the waves propagation velocity by 20-30 ppm.

EFFECT: the invention ensures production of the discolored monocrystals of lanthanum-gallium silicate and allows to increase the speed of propagation of the surface-acoustic waves at simultaneous reduction of the waves propagation dispersion by 20-30 ppm.

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RU 2 287 621 C1

Authors

Alenkov Vladimir Vladimirovich

Buzanov Oleg Alekseevich

Medvedev Andrej Valer'Evich

Sakharov Sergej Aleksandrovich

Dates

2006-11-20Published

2005-04-12Filed