FIELD: electronic instrumentation engineering. SUBSTANCE: method designed for dimensional profiling of silicon- carbide crystals to obtain structures of various configurations includes production of electricity conducting layer of at least 7•10-7 Ohm-1•cm-1 conductivity on one of substrate sides followed by initiating electrical discharge in aqueous medium between semiconductor substrate and metal electrode. Several silicon-carbide substrates are used and conducting layer is formed on all their surfaces; prior to initiating electrical discharge substrates are stacked and secured in electrode holder. EFFECT: enhanced productivity, enlarged functional capabilities. 3 cl, 1 dwg
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