METHOD OF MAKING SEMICONDUCTOR PRESSURE SENSORS Russian patent published in 2019 - IPC H01L21/18 

FIELD: instrument engineering.

SUBSTANCE: invention relates to production of semiconductor devices and can be used for production of semiconductor pressure sensors. Method for manufacturing a semiconductor pressure sensor includes making a sensitive element based on the structure "silicon on sapphire" with deposition of a glass dielectric by centrifugation, wherein semiconductor sensitive element of "silicon on sapphire" structure is connected to ceramic washer by glass-like dielectric of PbO-B₂O₃-ZnO system, wherein the coefficient of linear thermal expansion of the glass-like insulator is matched with the coefficient of linear thermal expansion of sapphire and ceramics, with the time of precipitation of the glass insulator by centrifugation method of 3–5 minutes, the centrifuge rotor speed of 7,000 rpm and melting of the obtained layer at temperature of 560–580 °C.

EFFECT: high reliability parameters and long-term stability of pressure sensor parameters due to the fact that semiconductor sensitive element of structure "silicon on sapphire" is connected to ceramic washer by glass-like dielectric system PbO-B₂O₃-ZnO.

1 cl, 2 dwg