FIELD: light sources, information displays, and the like.
SUBSTANCE: proposed light-emitting device has insulating substrate that carries plurality of GaN based light-emitting diode components. Plurality of light-emitting diode components are disposed on insulating substrate in the form of two-dimensional structure. Light-emitting diode components are assembled in first and second groups of equal number of components; first and second groups are inserted between two electrodes in parallel opposition for AC power supply. Electrode on one light-emitting diode component of first group is electrically connected and is common to electrode of one of light-emitting diode components of second group adjacent to one of mentioned light-emitting diode components of first group. Each group can be likewise assembled in the form of zigzag structure.
EFFECT: ability of light-emitting device operation at high excitation voltage and low excitation current.
12 cl, 31 dwg
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Authors
Dates
2007-03-10—Published
2003-08-28—Filed