SEMICONDUCTOR LIGHT-EMITTING DEVICE Russian patent published in 2013 - IPC H01L33/24 

FIELD: physics.

SUBSTANCE: semiconductor light-emitting device according to the invention comprises: a substrate; a first layer of an n-type conductivity semiconductor formed on the substrate; a second layer of a p-type conductivity semiconductor; an active layer between the first and second layers; a conducting layer on the second layer; a first contact deposited on the substrate; a second contact deposited on the conducting layer, wherein the substrate has at least one through-hole made in form of a truncated inverted pyramid. The first, second, active and conducting layers are deposited on both the horizontal portions of the substrate and the inner faces of the holes.

EFFECT: high efficiency of semiconductor light-emitting devices, while suppressing negative effects associated with vertices of inverted surface pyramids.

19 cl, 3 ex, 5 dwg