LIGHT EMITTING DIODE ON SILICON SUBSTRATE Russian patent published in 2021 - IPC H01L33/22 H01L33/30 

FIELD: semiconductor light-emitting devices.

SUBSTANCE: invention relates to the field of semiconductor light-emitting devices, namely to light-emitting diodes. The light-emitting diode contains a silicon substrate with a silicon carbide layer deposited on it, on which layers of a light-emitting structure are formed, and is equipped with current-carrying contacts. According to the invention, at the interface between silicon and silicon carbide, a decompressed layer is formed in silicon with dead-end pores that do not contain embedded silicon carbide material and provide an increase in light reflection from the substrate and its scattering. The light-emitting structure formed on the silicon carbide layer contains a buffer layer, n-type conductivity layers, an active region, and p-type conductivity layers. These layers are formed from III-nitride materials.

EFFECT: invention provides increase in quantum yield of light-emitting diodes by reducing absorption and increasing reflection and scattering of light at the substrate/light-emitting heterostructure interface.

4 cl, 3 dwg