LIGHT-EMITTING DIODE Russian patent published in 2024 - IPC H01L33/32 

FIELD: semiconductor light-emitting devices.

SUBSTANCE: invention relates to semiconductor light-emitting devices, namely to light-emitting diodes. Light-emitting diode contains a light-emitting crystal mounted by a flip-chip method on a sub-crystal board equipped with two current-conducting contacts. Light-emitting crystal is a light-emitting heterostructure grown on a growth thin-film silicon carbide structure and formed from epitaxial layers based on nitride compounds of group III metals of periodic table of the elements. Growth thin-film silicon carbide structure is two-layer, one of the layers of which is external, has a thickness of at least 3 mcm and is porous. Second layer is monocrystalline and has formed on it layers of a light-emitting heterostructure, including a buffer layer, completely covering a monocrystalline silicon carbide layer, and an n-type conductivity layer formed on the buffer layer. On a part of the surface of the n-type conductivity layer, opposite to one of the current-carrying contacts, an active region, a p-type conductivity layer and a first metal light-reflecting layer connected to the first current-carrying contact are formed in series. At the same time on the remaining part of the surface of the n-type conductivity layer there is a second metal light-reflecting layer connected to the second current-carrying contact.

EFFECT: invention enables to create a LED structure based on heterostructures grown on a growth thin-film silicon carbide two-layer structure, and does not require the use of operations of forming the relief of the light-emitting surface by a mechanical method during its manufacture, followed by reactive ion etching, that is, improved manufacturability.

3 cl, 2 dwg