MULTISTAGE SUPER-BROADBAND AMPLIFIER Russian patent published in 2007 - IPC H03F3/19 H03F3/60 

FIELD: radio engineering; amplifiers whose passband amounts to more than two octaves.

SUBSTANCE: proposed multistage super-broadband amplifier has at least two similar transistor amplifier stages and interstage matching circuit. Each amplifier stage has two-port incorporating feedback resistor, loading resistor, capacitor, microstrip line section, and resistor, all forming resonance-tuned circuit of desired passband. Two-port first input functions as amplifier stage input and is connected to transistor base lead; two-port second input is connected to transistor collector lead and functions as amplifier stage output. Interstage matching circuit has two sections of microstrip line and capacitor installed in clearance between line section leads.

EFFECT: enhanced stability, reduced variation in amplifier gain within broad frequency band, simplified design, and reduced size of device.

1 cl, 1 dwg