FIELD: photodetector and photodetector device manufacturing technique.
SUBSTANCE: proposed method for assembling radio components of infrared radiation photodetectors built around lead chalcogenide photoresistors and designed to operate in spectral region of 1 to 5 μm involves use of quick-sealing polymeric adhesive polyorganosiloxane urethanes under fast curing conditions for assembling infrared-radiation photodetectors from different components based on lead chalcogenide photoresistors by gluing them together due to introduction of polymerization reaction catalyst (tin diethyl caprylate) in silicone triol and organic diisocyanate (toluylene diisocyanate) compound.
EFFECT: improved manufacturing technique due to reduced adhesion time.
1 cl, 1 tbl
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Authors
Dates
2007-04-27—Published
2005-11-14—Filed