FIELD: cleaning tungsten hexafluoride for obtaining tungsten hexafluoride suitable for use in microelectronics and material technology.
SUBSTANCE: proposed method is used for cleaning tungsten hexafluoride at maximum content of admixtures of 10-2%. Proposed method includes rectification of tungsten hexafluoride; in the course of rectification, first the low-boiling fraction is selected and then commercial tungsten hexafluoride is extracted in form of intermediate fraction. Low-boiling and remaining high-boiling fractions are subjected to sorption cleaning and are returned for rectification carried out at pressure of 1.2-4.0 atm. Sorption cleaning of low-boiling and high-boiling fractions is carried out on barium fluorides and/or lithium fluorides at temperature of 20-40C.
EFFECT: high degree of purity of product and increased yield.
3 cl, 1 tbl, 2 ex
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