FIELD: semiconductor electronics; methods of production of the current collector systems.
SUBSTANCE: the invention is pertaining to the current collector system used for the device, which has been made with the capability of handling of the substrates and-or the slices. The current collector system has the cavity (1), which servers as the chamber for handling the substrates and-or the slices and which is passing in the longitudinal direction and is limited by the upper wall (2), the lower wall (3), the right-hand lateral wall (4), and the left-hand lateral wall (5). The upper wall (2) is formed by at least one detail made out of the electrically conducting material suitable for heating by means of the electromagnetic induction. The lower wall (3) is formed at least by one detail made out of the electrically conducting material suitable for heating by means of the electromagnetic induction. The right-hand lateral wall (4) is formed at least by one detail made out of the inert reflective and electrically insulating material, the left-hand lateral wall(5) is made at least by one detail made out of the inert reflective and electrically insulating material. Each detail of the upper wall (2) is electrically well insulated from each detail of the lower wall (3). The technical result of the invention consists in provision of the uniform heating of the chamber, that allows to produce the qualitative coatings, and also consists in the simplification of the design of the current collector system and the device for handling of the substrates and-or the slices.
EFFECT: the invention ensures the uniform heating of the chamber allowing to produce the qualitative coatings, simplification of the designs of the current collector system and the device for handling of the substrates and-or the slices.
21 cl, 5 dwg
Title | Year | Author | Number |
---|---|---|---|
SYSTEM OF CURRENT COLLECTOR | 2002 |
|
RU2305718C2 |
CVI DENSIFICATION EQUIPMENT INCLUDING HIGH-CAPABILITY PREHEATING AREA | 2015 |
|
RU2682902C2 |
METHOD OF CHEMICAL INFILTRATION OF MATERIAL COMPOSED OF CARBON AND SILICON AND/OR BORON FROM VAPOR PHASE | 1996 |
|
RU2158251C2 |
METHOD FOR COMPACTING SUBSTRATES BY CHEMICAL INFILTRATION IN GASEOUS PHASE AND APPARATUS FOR PERFORMING THE SAME | 2003 |
|
RU2293795C2 |
PLASMA TREATMENT CHAMBER AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE IN THE CHAMBER | 1999 |
|
RU2237314C2 |
GAS HEATER | 2003 |
|
RU2315821C2 |
INDUCTION FURNACE FOR OPERATION AT HIGH TEMPERATURES | 2003 |
|
RU2326319C2 |
AEROSOL DELIVERY DEVICE (VARIANTS) | 2019 |
|
RU2824939C2 |
ELECTROSTATIC ION ACCELERATOR SYSTEM | 2008 |
|
RU2523658C2 |
CVD REACTOR FOR SYNTHESIS OF HETEROEPITAXIAL SILICON CARBIDE FILMS ON SILICON SUBSTRATES | 2021 |
|
RU2767098C2 |
Authors
Dates
2007-08-20—Published
2002-12-10—Filed