METHOD OF CHEMICAL INFILTRATION OF MATERIAL COMPOSED OF CARBON AND SILICON AND/OR BORON FROM VAPOR PHASE Russian patent published in 2000 - IPC

FIELD: chemical industry, more particularly packing of porous substrate, e. g. fibrous substrate, with material composed of carbon and silicon and/or boron. SUBSTANCE: infiltration is carried out at temperature of not higher than 1050 C using gas phase containing gaseous precursor of material being added and hydrogen chloride volumetric content of which to gaseous precursor of silicon (e.g. methylchlorosilane) and/or boron, e.g. BCl₃ is preferably at least 25%. Method makes it possible to increase degree of effective charge of furnaces used for infiltration purposes, thus reducing considerably heterogeneity of packing in reaction chambers of furnaces between inlet of gas phase and outlet of residual gases. EFFECT: more efficient chemical infiltration method. 11 cl, 2 dwg, 4 tbl