MICROWAVE SWITCH Russian patent published in 2007 - IPC H01P1/15 

FIELD: microwave engineering; microwave switches built around field-effect transistors.

SUBSTANCE: newly introduced in one of transmission lines at output of proposed microwave switch built around Schottky-barrier field-effect transistors is at least one transmission-line section whose length equals line quarter-wavelength and wave impedance equals that of transmission line. One end of transmission line section is connected to this transmission line at output and other one, to drain of respective Schottky-barrier field-effect transistor. Drain of other Schottky-barrier field-effect transistor is connected to other transmission line at output, and gates of both transistors are interconnected and connected to one of DC control voltage supplies. Distances from point of connection of three transmission lines to point of connection of line section to this transmission line at output and to drain of other Schottky-barrier field-effect transistor equal quarter-wavelength in transmission lines.

EFFECT: reduced mass and size of switch and direct microwave signal loss.

1 cl, 4 dwg