SHF SWITCH Russian patent published in 2012 - IPC H01P1/15 

FIELD: electricity.

SUBSTANCE: device includes three power lines (PL) with equal wave impedance; one PL is purposed for input of SHF signal the other PLs are intended for output. At output each of two PLs is equipped with at least one electronic switch - field-effect transistor (FET) with Schottky junction (SJ). Source of each first FET with SJ is connected with PL at input, source of each second FET with SJ is grounded and gates of FETs with SJ are interconnected and connected with one source of DC control voltage. Device is equipped with two inductance coils (I), two capacitors (C) and resistor. Resistor has impedance exceeding PL wave impedance by an order. One end of the first I is connected to PL at first output while the other its end is connected with sink of the first FET with SJ and one end of the first C, the other end of this C is grounded. One end of the second I is connected with PL at input while it other end is connected to sink of the second FET with SJ and one end of the second E, the other end of this E is connected with PL at the second output and gates of FETs with SJ are connected with one source of DC control voltage through resistor.

EFFECT: increase of service bandwidth, decrease in value of voltage standing-wave ratio at maintenance of low value of direct SHF losses and high values of SHF signal attenuation.

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