MICROWAVE ATTENUATOR Russian patent published in 2007 - IPC H01P1/22 

FIELD: electronic engineering; microwave attenuators built around semiconductor devices.

SUBSTANCE: proposed microwave attenuator has one attenuator stage incorporating three resistors of which one is disposed in series and two other ones , in parallel to transmission lines at attenuator input and output, as well as three electronic switches. Schottky-barrier field-effect transistors are used as electronic switches. Resistors are isolated from each other Newly introduced in each attenuator stage are two transmission line sections disposed on either side of first resistor. One end of transmission line section is connected to one of respective resistor leads and to drain of respective Schottky-barrier field-effect transistor and other end of line section, to those of first resistor. Other lead of two remaining resistors is connected to sources of respective Schottky-barrier field-effect transistor. Gates of Schottky-barrier field-effect transistors are interconnected and connected to one DC control voltage supply.

EFFECT: ability of attaining zero phase shift of signal in response to direct-current control voltage variations, simplified design, reduced direct loss, mass, and size.

2 cl, 4 dwg