MICROWAVE SWITCH Russian patent published in 2007 - IPC H01P1/15 

FIELD: microwave engineering; microwave switches built around semiconductor devices.

SUBSTANCE: proposed microwave switch has three transmission lines of similar wave impedances; one transmission line is designed for microwave signal input and two other ones, for its output. Each transmission line is provided with at least one electronic switch in the form of Schottky-barrier field-effect transistors connected at its output. Drain of each first and second Schottky-barrier field-effect transistor is connected at output to respective transmission line; source of first transistor is connected to transmission line at input. Second Schottky-barrier field-effect transistor is disposed at transmission line input and spaced quarter-wavelength apart from this transmission line; its source is grounded. Gates of all Schottky-barrier field-effect transistors are interconnected and connected to one DC control voltage supply.

EFFECT: enhanced attenuation of microwave signal, reduced module of microwave signal reflectivity, reduced size and mass.

1 cl, 4 dwg