MICROWAVE ATTENUATOR Russian patent published in 2008 - IPC H01P1/22 

FIELD: electronics.

SUBSTANCE: microwave attenuator includes first field-effected transistor with Schottky barrier and two inserted field effected transistor with Schottky barrier each of them combined respectively with a quarter-wavelength section of transmission line and resistor with resistance value equal to impedance of the transmission line. The inserted transistors are located on different sides of the first field-effected transistor with Schottky barrier either in symmetrical or asymmetrical way. One end of each resistor is connected to corresponding transmission line either at the input or at the output, and another end is connected through the transmission line section to the drain of appropriate field-effected transistor with Schottky barrier. Sources of inserted transistors are grounded and gates of three field-effected transistors with Schottky barrier are connected to each other and to one of the sources of driving voltage.

EFFECT: provision of linear change of microwave signal attenuation depending on control voltage that varies continuously in a wide interval and reduction of weight and size parameters.

3 cl, 4 dwg