POWER SEMICONDUCTOR MODULE Russian patent published in 2007 - IPC H01L25/11 H01L23/48 

FIELD: power electronics.

SUBSTANCE: proposed power semiconductor module has two main power leads disposed on opposite, actually parallel, main surfaces of module of which first one is made in the form of top electricity-conductive closing board, shielding package connected to top closing board, and at least two sub-modules inserted between both main leads of power semiconductor module; each sub-module has two main power leads and at least one semiconductor chip carrying main electrodes electrically connected to sub-module main leads. Sub-modules are disposed close to one another, bear compressive force, and are tightly fitted through one of two main surfaces to top electricity-conductive closing board. At least two sub-modules are electrically interconnected in series. Such series connection of sub-modules disposed close to one another doubles maximal closing voltage across module.

EFFECT: reduced length and cost of high-voltage switch stack due to reduced requirement of components, such as modules and cooling facilities, at same cut-off voltages.

15 cl, 6 dwg