SEMICONDUCTOR MODULE AND METHOD FOR SEMICONDUCTOR MODULE MANUFACTURE Russian patent published in 2008 - IPC H01L23/12 

FIELD: power semiconductor engineering.

SUBSTANCE: proposed semiconductor module has base member, insulating member coated with metal on both sides and disposed by means of one of both metal-coated surfaces on base member, as well as at least one semiconductor member disposed on other metal-coated surface. Disposed on extreme section of insulating member is insulating layer whose surface and second metal-coated surface form common flat surface. Method is also proposed for manufacturing such semiconductor module.

EFFECT: enhanced dielectric strength and facilitated manufacture of proposed semiconductor module.

10 cl, 5 dwg