RESISTIVE MATERIAL AND TARGET MADE OF RESISTIVE MATERIAL Russian patent published in 2008 - IPC H01C7/00 

FIELD: electronic engineering; resistor manufacture.

SUBSTANCE: proposed resistive material for thin-film resistors has in its composition chromium, tungsten, silicon, manganese dioxide, and cerium dioxide, proportion of ingredients being as follows, mass percent: tungsten, 8-13; silicon, 4-18; manganese dioxide, 2-33; cerium dioxide, 6-39; chromium, the rest. Target made of proposed resistive material and designed for ion-plasma deposition of multicomponent conductive layer on thin-film resistors is made in the form of combination circle assembled of sectors made of above-described sintered resistive spraying material and has fastening strap in the form of metal disk. The latter is made of stainless steel, 80 to 150 mm in diameter. Strap in the form of metal disk can be also made of titanium, 60 to 145 mm in diameter and 1.5 to 3 mm in thickness. Strap can be built of two metal disks concentrically mounted one after other, one of them being made of stainless steel, 80 to 150 mm in diameter, 2 to 4 mm in thickness and other disk, of titanium, 60 to 145 mm in diameter and 1.5 to 3 mm in thickness.

EFFECT: enhanced yield of resistors having low coefficient of temperature resistance, reduced labor consumption for their manufacture.

6 cl, 4 tbl