FIELD: electric engineering.
SUBSTANCE: resistive engineering contains chrome, modifying additives of manganese, cobalt and nickel dioxide, alloying additives of iron and titanium at the following quantitative ratio of components, in weight %: chrome 90-94, manganese dioxide 1-4, nickel dioxide 1-2, cobalt dioxide 4-6, iron 0.03-0.1, and titanium 0.1-0.2. Proposed resistive material provides for national production of heat-resistant targets which are used for electro-conductive films production of low resistors having 0.1-3.0 Ohm resistance and temperature coefficient of resistance - to ±100×10-6 1/°C.
EFFECT: decrease of thermal film resistance and temporary instability of resistance temperature from low resistors.
1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| RESISTIVE MATERIAL AND TARGET MADE OF RESISTIVE MATERIAL | 2006 |
|
RU2323496C1 |
| MATERIAL FOR MANUFACTURING THIN-FILM RESISTORS AND METHOD FOR PRODUCING RESISTIVE FILM AROUND IT | 2006 |
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| METHOD FOR PRODUCING A MULTILAYER THIN-FILM HETEROSTRUCTURE WITH A GIVEN VALUE OF SPECIFIC SURFACE RESISTANCE | 2020 |
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| MATERIAL OR MAKING THIN-FILM RESISTORS | 2007 |
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SU1019500A1 |
| RESISTIVE MATERIAL FOR MANUFACTURING OF THIN-FILM RESISTORS | 2008 |
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| MATERIAL FOR MANUFACTURING OF THIN-FILM RESISTORS | 2008 |
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| MATERIAL FOR PRODUCTION OF THIN-FILM RESISTORS | 2007 |
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| MATERIAL FOR LOW-RESISTANCE THIN-FILM RESISTORS | 0 |
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| MANUFACTURING METHOD OF NANO- AND MICRO-SIZED SYSTEM OF SENSOR OF PHYSICAL VALUES WITH SPECIFIED POSITIVE TEMPERATURE COEFFICIENT OF RESISTANCE OF RESISTIVE ELEMENTS | 2014 |
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RU2554083C1 |
