METHOD FOR PRODUCING THIN-FILM RESISTOR UNIT Russian patent published in 2007 - IPC H01C17/75 

Abstract RU 2297682 C1

FIELD: thin-film resistor manufacturing processes.

SUBSTANCE: proposed method includes evaporation of current-conducting layer onto ceramic substrate by way of ion-plasma spraying and heat treatment in open air. Then, minimum in 12 h after evaporation, blanks obtained are given heat treatment at temperature of 630 to 720 °C for 30 to 60 minutes, and TCR is measured. This temperature should be of above-zero value.

EFFECT: improved operating characteristics of resistor units due to their enhanced temperature and electric loading capacity.

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RU 2 297 682 C1

Authors

Gorskij Oleg Borisovich

Dashko Valerij Nikitovich

Kudinov Sergej Andreevich

Panchishka Anastasija Vasil'Evna

Dates

2007-04-20Published

2005-09-23Filed