FIELD: physics; microelectronics.
SUBSTANCE: device intended to produce layers from gas phase at reduced pressure that includes a deposition chamber composed of an inner reactor in the form of horizontal pipe with longitudinal holes in its walls arranged regularly in a checkered pattern, which is installed coaxially with outer reactor implemented as horizontal pipe to form with said inner reactor a chamber for gaseous chemical agents supply equipped with nipples for gaseous chemical agent injection, an evacuation system equipped with three vacuum gates, two of which located in the evacuation system of vacuum pump connected to the ends of said deposition chamber via evacuation chambers, and the third gate located between them symmetrically to the deposition chamber, and a heater. The gaseous chemical agent supply chamber is equipped with an additional nipple implemented in the form of evacuated quartz tube inserted to the middle of the gaseous chemical agent supply chamber, provided that outlet of the additional nipple is located between longitudinal holes of the inner reactor.
EFFECT: provision of isothermic and isobaric conditions of layer depositing; results in elimination of inhomogeneity of layer properties over depositing zone.
2 dwg
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Authors
Dates
2008-05-10—Published
2006-09-27—Filed