PLASMA-CHEMICAL REACTOR OF BARREL TYPE Russian patent published in 1994 - IPC

Abstract RU 2024990 C1

FIELD: microelectronics. SUBSTANCE: plasma-chemical reactor of barrel type includes vacuum discharge chamber formed by cylindrical dielectric body and two grounded metal lids with dielectric coat mounted on its butts acting as electrodes. Collectors to feed and pump out working gas manufactured in the form of longitudinally perforated dielectric pipes passing along walls of body over its entire length are put into chamber through unopened lid. Dielectric ladle with treated plates oriented perpendicular to axis of reactor is loaded into chamber through opened lid. Plates are split into two groups by unfilled spacing located in reactor area embraced with ring HF electrode. Metal plates-simulaters with dielectric coating are positioned at start and finish of each group of plates. Perforation of collectors faces wall of body, pump-out collector is placed in lower part of reactor. Quartz, silicon carbide and aluminium oxide are used in the capacity of dielectric materials of body, ladle, collectors, coats of butt lids and plates-simulators during process of treatment of silicon plates. EFFECT: simplified design, reduced cost of manufacture of silicon plates. 3 cl, 2 dwg

Similar patents RU2024990C1

Title Year Author Number
REACTOR FOR PLASMA PRECIPITATION 1992
  • Klykov V.I.
  • Vavers V.Ja.
  • Gavrilkina E.F.
  • Stasjuk I.O.
RU2008741C1
METHOD AND DEVICE FOR PLASMACHEMICAL TREATMENT OF SUBSTRATES 2000
  • Rjabyj V.A.
  • Savinov V.P.
  • Sporykhin A.A.
  • Li Khion-Dzhu
RU2178219C1
METHOD OF PLASMA ETCHING OF THIN FILMS 1992
  • Khodachenko G.V.
  • Fetisov I.K.
  • Mozgrin D.V.
  • Shelykhmanov E.F.
  • Galperin V.A.
  • Nevzorov P.I.
RU2029411C1
REACTOR FOR PLASMA PROCESSING OF SEMICONDUCTOR STRUCTURES 2017
  • Pavlov Georgij Yakovlevich
  • Sologub Vadim Aleksandrovich
  • Ajrapetov Aleksandr Armenakovich
  • Biryukov Mikhail Georgievich
  • Odinokov Vadim Vasilevich
  • Karpenkova Elena Vladimirovna
  • Guseva Natalya Borisovna
  • Pavlov Vladimir Borisovich
  • Neklyudova Polina Alekseevna
  • Nikonov Aleksandr Mikhajlovich
  • Petrov Aleksandr Kirillovich
  • Vavilin Konstantin Viktorovich
  • Kralkina Elena Aleksandrovna
RU2670249C1
PROCESS OF PLASMA CHEMICAL REMOVAL OF FILMS OF PHOTORESIST 1989
  • Budjanskij A.M.
  • Pokroev A.G.
  • Efremov A.N.
  • Lebedev Eh.A.
  • Gomzhin I.V.
RU1653484C
PROCESS OF SELECTIVE ETCHING OF SILICON-CONTAINING LAYER IN MULTILAYER STRUCTURES 0
  • Stasyuk Igor Olegovich
  • Kunitsin Anatolij Viktorovich
  • Fominykh Nikolaj Arkadevich
  • Ivankovskij Maksim Maksimovich
  • Meertal Igor Olegovich
  • Ostapchuk Sergej Aleksandrovich
SU1819356A3
REACTOR FOR PLASMA TREATMENT OF SEMICONDUCTOR STRUCTURES 2009
  • Vinogradov Anatolij Ivanovich
  • Golishnikov Aleksandr Anatol'Evich
  • Zarjankin Nikolaj Mikhajlovich
  • Timoshenkov Sergej Petrovich
  • Putrja Mikhail Georgievich
RU2408950C1
DEVICE FOR PLASMOCHEMICAL ETCHING MATERIALS 1987
  • Budjanskij A.M.
  • Pokroev A.G.
  • Farenik V.I.
  • Pletnev V.M.
RU1573896C
REACTOR FOR PLASMA-CHEMICAL TREATMENT OF SEMICONDUCTOR STRUCTURES 2020
  • Dolgopolov Vladimir Mironovich
  • Irakin Pavel Aleksandrovich
  • Logunov Konstantin Vladimirovich
  • Afonin Pavel Evgenevich
  • Ivanov Ilya Aleksandrovich
RU2753823C1
REACTOR FOR PLASMA-CHEMICAL ETCHING OF SEMICONDUCTOR STRUCTURES 2017
  • Dolgopolov Vladimir Mironovich
  • Irakin Pavel Aleksandrovich
  • Logunov Konstantin Vladimirovich
  • Shubnikov Aleksandr Valerevich
  • Biryukov Mikhail Georgievich
  • Odinokov Vadi Vasilevich
  • Pavlov Georgij Yakovlevich
RU2678506C1

RU 2 024 990 C1

Authors

Kireev V.Ju.

Kovalevskij V.L.

Rjabyj V.A.

Savinov V.P.

Sporykhin A.A.

Sukhorukov S.S.

Shejko L.N.

Jakunin V.G.

Sologub V.A.

Shelykhmanov E.F.

Jastrebov V.G.

Dates

1994-12-15Published

1992-03-23Filed