REACTOR WITH SUBSTRATE HOLDER FOR OBTAINING LAYERS FROM GASEOUS PHASE AT DECREASED PRESSURE Russian patent published in 2012 - IPC C30B25/02 C30B25/12 C23C16/458 

FIELD: machine building.

SUBSTANCE: reactor in the form of horizontal tube, which is insulated from atmosphere, includes heater, gas inlets, pumping-out pipeline with gate valve and slow pumping-out valve, and vacuum pump. In reactor there installed is substrate holder consisting of lower base 9 in the form of semi-cylinder, which contains sections 10, 11 of substrate carriers 14, which consist of two end flanges along the edges of which there fixed are strip carriers 12 with slots 13 for substrates 14; sections are fixed by means of internal end flanges; along the perimeter of end flanges and external side of strip carriers 12 there fixed is perforated casing 15; to external end flanges of lower base 9 there attached are additional flanges 17 providing coaxial location of substrate holder in the reactor; lower base 9 is closed with upper casing with perforation in the form of semi-cylinder with the radius equal to radius of lower base; casings are perforated in staggered order. Substrate holder is made of titanium sheet. Its sizes meet the following condition: L(R_p-r_n)^-1=2, where L -distance between substrates, R_p - inner radius of lower and upper casings; r_n - substrate radius. Under substrate holder there can be installed at least one perforated tube throughout the length equal to reactor deposition zone.

EFFECT: reducing non-homogeneity of thickness of deposited layer, increasing service life of the device, simplifying its manufacturing technology, reducing the cost of obtaining dielectric semi-conductor and metal layers for production of integrated microcircuits.

4 cl, 5 dwg, 3 ex