TREATMENT OF SEMICONDUCTOR SURFACES AND MIXTURE USED IN PROCESS Russian patent published in 2008 - IPC C11D7/18 C11D7/32 H01L21/306 

FIELD: chemistry.

SUBSTANCE: invention pertains to compositions used for treating surfaces and the method of treating the surface of a substrate, using such a composition. The essence of the invention is that, the cleaning solution contains water, hydrogen peroxide, an alkaline compound and 2,2-bis-(hydroxyethyl)-(iminotris)-(hydroxymethyl)methane as a chelating additive. The alkaline compound is preferably chosen from a group containing an organic base, ammonia, ammonium hydroxide, tetramethylammonium hydroxide, and most preferably from a group containing ammonia and ammonium hydroxide. Content of the chelating additive is 1000-3000 ppm. The cleaning solutions are used for the process of treating the surface, including cleaning, etching, polishing, and film-formation, for cleaning substrates, made from semiconductor, metal, glass, ceramic, plastic, magnetic material, and superconductors. The method involves treatment of semiconductor substrate(s) using a cleaning solution and drying the given semiconductor substrate(s) after washing in water.

EFFECT: increased stability of the solution at high temperature and increased degree of purification of surfaces.

3 cl, 2 tbl, 15 dwg, 3 ex