DEVICE FOR COULOMETRIC MEASUREMENT OF ELECTROPHYSICAL PARAMETERS OF n-MOS TRANSISTOR NANOSTRUCTURES IN CMOS/SOI TECHNOLOGIES Russian patent published in 2012 - IPC G01R31/26 H01L21/66 B82B1/00 

FIELD: electricity.

SUBSTANCE: invention relates to the field of measurement instrumentation, to measurement of electrophysical parameters (EPPs) of semiconductor transistor structures and may be used for evaluation of the technological process quality during production of solid microcircuits and MIS-based devices. The device for coulonometric measurement of electrophysical parameters of n-MOS transistor nanostructures in CMOS/SOI technologies includes a generator of rectangular pulses of positive polarity voltage, a MIS test capacitor, an R_H load current limiting resistor and an oscillographic recorder of pulse shape; on the MIS capacitor gate side the series-coupled MIS capacitor and the load resistor are connected with one end to the R_H resistor harmonising the measuring line wave resistance at the R1 spot of connection to the measuring line signal end; with the other end, on the R_H side, they are connected to the assembly of R1 coupling to the zero potential shared bus of the measuring line the signal end whereof, on the other side, is connected to the to the input circuit of the rectangular pulse generator; connected to the MIS capacitor/R_H load resistor coupling assembly are the oscillographic recorder input circuits.

EFFECT: measurement of EPPs such as: profile of charge carriers distribution within SOI structure buffer layers, charge carriers mobility, value of stationary built-in charge in the MIS structure, gate dielectric leakage resistance during synchronisation of the impact of pulse ionising radiation (PIR) and rectangular voltage pulse on the MIS structure with measurement cycle duration being less than 1 ms in the process of PIR impact or immediately after it.

6 cl, 11 dwg, 1 tbl