FIELD: technological processes.
SUBSTANCE: invention is related to growing crystals from vapors, in particular to growing of aluminium nitride single crystals by condensation of evaporated and sublimated material. Method includes installation of base and aluminium vapors source opposite to each other in growing chamber, heating and maintenance of working temperatures. In order to balance atmosphere inside the growing chamber heating and maintenance of working temperatures is performed in atmosphere of aluminium and nitrogen vapors mixture from external side of growing chamber. For that purpose device for single-crystalline aluminium nitride growing additionally contains external crucible with cover for installation of growing chamber in it, in which aluminium vapors source is placed.
EFFECT: application of suggested method and device for growing of single-crystalline aluminium nitride allows to increase amount of proper crystals of aluminium nitride and to increase their quality.
2 cl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF SINGLE-CRYSTALLINE ALUMINIUM NITRIDE GROWING | 2005 |
|
RU2330905C2 |
| METHOD OF PRODUCING SUBMICRON CRYSTALS OF ALUMINIUM NITRIDE | 2019 |
|
RU2738328C2 |
| TECHNOLOGY OF EPITAXIAL GROWTH OF MONOCRYSTALLINE ALUMINUM NITRIDE AND GROWTH CHAMBER FOR IMPLEMENTATION OF TECHNOLOGY | 1999 |
|
RU2158789C1 |
| METHOD OF GROWING AlN MONOCRYSTAL AND APPARATUS FOR REALISING SAID METHOD | 2011 |
|
RU2468128C1 |
| METHOD OF PRODUCING MONOCRYSTALLINE SIC | 2017 |
|
RU2671349C1 |
| PROCEDURE FOR PRODUCTION OF MICRO-CRYSTALS OF ALUMINIUM | 2010 |
|
RU2437968C1 |
| METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALS OF METALS NITRIDES OF 3A GROUP OF CHEMICAL ELEMENTS | 1996 |
|
RU2097452C1 |
| METHOD OF GROWING GALLIUM NITRIDE FILM | 2014 |
|
RU2578870C2 |
| METHOD FOR GROWING SINGLE CRYSTALS OF TRINARY COMPOUND OF ZINC, GERMANIUM AND PHOSPHORUS | 2023 |
|
RU2813036C1 |
| CRUCIBLE FOR GROWTH OF VOLUME SINGLE CRYSTAL OF ALUMINIUM NITRIDE (AlN) | 2008 |
|
RU2389832C1 |
