METHOD OF SINGLE-CRYSTALLINE ALUMINIUM NITRIDE GROWING Russian patent published in 2008 - IPC C30B23/00 C30B29/38 

FIELD: technological processes.

SUBSTANCE: invention is related to growing of single crystals from vapors, in particular to growing of single crystals of aluminium nitride by condensation of evaporated or sublimated material. Method includes installation of base and aluminium vapors source opposite to each other in growing chamber, heating and maintenance of working temperatures of base and source. In order to clean base and aluminium vapors source from volatile admixtures, base and aluminium vapors source are preliminarily heated up to temperature of 1500÷700°C with pressure not exceeding 10^-3 mm of mercury column. Then in order to suppress excess evaporation and exclude possibility of polycrystals growing, nitrogen is supplied to growing chamber until pressure of 0.9÷1 atm, afterwards heating is continued up to working temperature.

EFFECT: suggested method allows to increase amount of proper crystals output, which meet set parameters, and also to increase quality of grown crystals at the account of base and aluminium vapors source cleaning from volatile admixtures in the process of heating.