METHOD FOR EPITAXIAL GROWTH OF MONOCRYSTALS OF METALS NITRIDES OF 3A GROUP OF CHEMICAL ELEMENTS Russian patent published in 1997 - IPC

FIELD: methods for growing single-crystal semiconductors for electronic industry. SUBSTANCE: method for growing of at least one metal relating to A subgroup of the third group of chemical elements from vapor phase includes arrangement in parallel, opposite to each other, of evaporating surface of metal source preset in composition of grown single crystal and growing surface of substrate forming growing zone; formation of ammonia flow in zone of growing; heating the source and substrate up to temperature ensuring growth of single crystal on substrate with source temperature maintained higher than that of substrate. According to the invention source of material is used in the form of mixture containing metallic component including at least one free metal preset in the composition of grown single crystal and nitride component including at least one nitride of at least one metal preset in the composition of grown single crystal. EFFECT: higher efficiency. 9 cl, 1 dwg