TECHNOLOGY OF EPITAXIAL GROWTH OF MONOCRYSTALLINE ALUMINUM NITRIDE AND GROWTH CHAMBER FOR IMPLEMENTATION OF TECHNOLOGY Russian patent published in 2000 - IPC

FIELD: manufacture of semiconductors for electron industry. SUBSTANCE: technology of epitaxial growth of monocrystalline aluminum nitride from mixture of nitrogen and vapors of aluminum involves positioning of substrate 4 and aluminum source 5 in opposition in growth chamber 3, heating and keeping of working temperatures of source 5 and substrate 4 which provide for formation of vapors of aluminum in composition of mixture and growth of monocrystal of aluminum nitride on substrate 4. In this case pressure of mixture of nitrogen and vapors of aluminum in growth chamber 3 is maintained in interval of 400 millibars from lower value equal to pressure created in closed space by stoichiometric mixture of vapors of aluminum formed by evaporation of material of source 5 and nitrogen with 1:1 ratio of concentration of atoms of nitrogen and aluminum. In growth chamber 3 material contacting source and vapors of aluminum of surface presents solid solution of tantalum carbide in tantalum. EFFECT: achievement of high rate of growth of monocrystals, possibility of multiple growth of volumetric monocrystals without any change of technological equipment. 6 cl, 3 dwg