METHOD OF PRODUCING MONOCRYSTALLINE SIC Russian patent published in 2018 - IPC C30B23/00 C30B23/06 C30B29/36 C23C14/26 

FIELD: electrical engineering.

SUBSTANCE: invention relates to microelectronics and relates to the technology of producing monocrystalline SiC – a widespread material, used to make integrated circuits. Method of producing monocrystalline SiC involves sublimation of a source of SiC placed in a crucible onto a plate of a seed mono crystal SiC, wherein the growth stage of mono crystal SiC is carried out in atmosphere of a gas mixture of inert gas and hydrogen, while in growth chamber is placed having a hole in the bottom of the crucible by its installation on the holder of the crucible having axial through hole, in such a way that the holes in the bottom of the crucible and in the holder form a channel for passage of gases, and in the region of SiC source, it is possible to place the SiC source in a crucible having a hole in the bottom, by placing coaxially with the hole in the bottom of the crucible, a cylindrical graphite sleeve whose internal diameter is at least equal to the diameter of the hole in the bottom of the crucible, with the formation of area to place the SIC source between the inner surface of the crucible and the outer surface of the sleeve or by placing a plate of porous graphite fixed on the inner surface of the crucible walls above the bottom of the crucible to form an area for placing SiC source, bounded by the inner surface of the crucible and the upper surface of the plate. In the process of growth, mixture of inert gas with hydrogen is supplied, the content of which is from 2 vol.% to 20 vol.% , directly into the area of the SIC source location in the crucible through the formed channel for passage of gases.

EFFECT: technical result of the invention is to reduce cost of the method, increase its productivity and improve quality of grown monocrystalline ingots SiC.

3 cl, 2 dwg, 6 ex