DEVICE FOR CONTINUOUS GROWTH OF TWO-SIDED SILICON LAYERS ON CARBON FOIL Russian patent published in 2008 - IPC C30B15/34 C30B28/10 C30B29/06 C30B29/64 

Abstract RU 2332530 C1

FIELD: technological process.

SUBSTANCE: invention pertains to growth of monocrystalline silicon layers from a molten mass, and can be used in making solar cells (photoconverters). The device consists of a crucible for melting, a heater, consisting of two heating sections: a square one, the inside of which is fitted with a crucible, and a rectangular one, put over a substrate, a substrate, linked to its displacement mechanism, capillary feeder, bundles of carbon fibres, wound on the tail of the feeder, and a vibrating feeder for supplying crushed silicon. The substrate used is a carbon foil, covered by pyrographite layers. The capillary feeder has an opening for putting in the substrate, and the rectangular heating section is symmetrical about the substrate and has vertical incisions for letting in the substrate.

EFFECT: increased output of the device due to growth of thin silicon layers at the same time on both surfaces of the substrate, due to reduction of the specific consumption of initial silicon due to that, the substrate does not get soaked in the molten mass.

1 ex, 2 dwg

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RU 2 332 530 C1

Authors

Brantov Sergej Konstantinovich

Kulakov Pavel Valer'Evich

Porkhunov Evgenij Vladimirovich

Dates

2008-08-27Published

2006-12-15Filed