PROCEDURE AND FACILITY FOR GROWING SILICON CRYSTAL ON BASE Russian patent published in 2010 - IPC C30B15/34 C30B29/06 C30B28/10 

FIELD: metallurgy.

SUBSTANCE: invention refers to growing poly-crystal layers of silicon out of melt, particularly to procedures of application of thin films of silicon in base for fabricating solar cells. The facility for growing poly-crystal layers 5 of silicon consists of crucible 1 for melt 2 of silicon, of base 4 out of graphite foil corresponding to an electrode of a solar photo-cell, and of a capillary feeder equipped with at least one rotating roller 3 contacting melt 2 of silicon in crucible 1. The roller can be made with textured surface. During crystal growing the roller is transferred relative to the base or the base is transferred relative to the roller. The roller is arranged either above or under the base. Several alloying substances are simultaneously applied on the base with the roller. The roller and the base are arranged relative to each another in such a way as to ensure application of silicon in vertical or horizontal plane.

EFFECT: facilitating decreased expenditure of silicon due to less thickness of silicon layers (30-50 mcm) at width equal to width of standard solar plate of 156 mm, increased rate of application up to 5 cm per minute and more, decreased number of operations at fabrication due to eliminating operation of electrode application and finally reduced prime cost of solar cell while maintaining its functional characteristics.

6 cl, 4 dwg