FIELD: mining engineering.
SUBSTANCE: invention relates to growing field from melt of polycrystalline silicon layer and can be used in manufacturing of solar cells (photo-transducer). Device for growing of layers 5 of silicon on carbonic substratum 4, switches on crucible, substratum, connected to its movement mechanism, capillary feeder and heater 2 of feeder, herewith capillary feeder and crucible are matched in one detail 1 in form of hollow boat with bottom slot, in which it is inserted element 3 made of carbonic capillary-porous material: carbonic thick felt or coal-graphitic fabric, contacting to substratum.
EFFECT: invention provides simplification and reduce the price of structure of thermal block and its control system, increasing of uniformity of thermal field in substratum field, and also consumption reduction of electricity and to reduce dimensions of growing vessel.
2 dwg
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Authors
Dates
2009-08-27—Published
2008-03-26—Filed