DEVICE FOR GROWING OF SILICON LAYERS ON CARBONIC SUBSTRATUM Russian patent published in 2009 - IPC C30B15/34 C30B29/06 C30B29/64 C30B15/02 C30B15/10 

Abstract RU 2365684 C1

FIELD: mining engineering.

SUBSTANCE: invention relates to growing field from melt of polycrystalline silicon layer and can be used in manufacturing of solar cells (photo-transducer). Device for growing of layers 5 of silicon on carbonic substratum 4, switches on crucible, substratum, connected to its movement mechanism, capillary feeder and heater 2 of feeder, herewith capillary feeder and crucible are matched in one detail 1 in form of hollow boat with bottom slot, in which it is inserted element 3 made of carbonic capillary-porous material: carbonic thick felt or coal-graphitic fabric, contacting to substratum.

EFFECT: invention provides simplification and reduce the price of structure of thermal block and its control system, increasing of uniformity of thermal field in substratum field, and also consumption reduction of electricity and to reduce dimensions of growing vessel.

2 dwg

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RU 2 365 684 C1

Authors

Brantov Sergej Konstantinovich

Efremov Viktor Semenovich

Dates

2009-08-27Published

2008-03-26Filed