METHOD OF GALLIUM NANO-PARTICLES PRODUCTION Russian patent published in 2008 - IPC C30B11/00 C30B29/02 B82B3/00 

Abstract RU 2336371 C1

FIELD: technological processes, nanotechnologies.

SUBSTANCE: invention is related to the field of nanotechnologies, in particular, for production of Ga nano-particles. Ga nano-particles are produced in crystalline matrix of gallium mono-selenide by means of melting of batch with composition of Ga 52±0.05% (wt), Se 48±0.05% (wt) and further crystallisation at forward motion of crystallisation front with periodical stops. Frequency of stops lies within the range of 6-18 min, duration of every stop makes 0.003-0.005 sec. Prevalent size of produced particles makes 20 nm.

EFFECT: development of efficient method of gallium nano-particles production.

4 ex, 1 tbl, 1 dwg

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RU 2 336 371 C1

Authors

Kolesnikov Nikolaj Nikolaevich

Kveder Vitalij Vladimirovich

Borisenko Dmitrij Nikolaevich

Borisenko Elena Borisovna

Timonina Anna Vladimirovna

Bozhko Sergej Ivanovich

Dates

2008-10-20Published

2007-03-07Filed