FIELD: metallurgy.
SUBSTANCE: invention refers to the method for obtaining GaTe crystals that can be used in non-linear optics, and namely for optic frequency converters of infrared and terahertz ranges. Gallium telluride (II) crystals are grown by vertical zone melting in graphite crucibles under argon pressure of 95-105 ata at zone movement speed of 9.5-10.3 mm/hour.
EFFECT: invention allows growing GaTe monocrystals having hexagonal structure and homogeneous light transmission in wave length range of 2,5-15 mcm.
3 dwg, 6 ex
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