METHOD OF PRODUCING SILICON TARGETS FOR MAGNETRON SPUTTERING Russian patent published in 2017 - IPC B22D27/04 C22C1/04 

Abstract RU 2631372 C1

FIELD: metallurgy.

SUBSTANCE: charge of semiconductor polycrystalline silicon is melted in a graphite crucible which is moved vertically in the heater cavity. A plug of frozen silicon is formed in the bottom hole of the crucible. After plug melting, the melt flows through the bottom opening into the gate opening of the graphite mould and its crystallisation.

EFFECT: production of high purity silicon products.

3 dwg, 1 tbl, 1 ex

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RU 2 631 372 C1

Authors

Brantov Sergej Konstantinovich

Borisenko Dmitrij Nikolaevich

Dates

2017-09-21Published

2016-04-04Filed