FIELD: metallurgy.
SUBSTANCE: charge of semiconductor polycrystalline silicon is melted in a graphite crucible which is moved vertically in the heater cavity. A plug of frozen silicon is formed in the bottom hole of the crucible. After plug melting, the melt flows through the bottom opening into the gate opening of the graphite mould and its crystallisation.
EFFECT: production of high purity silicon products.
3 dwg, 1 tbl, 1 ex
Title | Year | Author | Number |
---|---|---|---|
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|
RU2026141C1 |
DEVICE FOR CONTINUOUS GROUPED GROWING OF ORIENTED LAYERS OF SILICON ON A CARBONIC FABRIC | 2004 |
|
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SHELL MOLD CASTING CHAMBER, CASTING FURNACE, AND SINGLE-CRYSTAL, SMALL-CRYSTAL, AND NON-CRYSTAL CASTING METHOD | 2020 |
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METHOD AND APPARATUS FOR PREPARING MELT SILICATE | 1999 |
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RU2157795C1 |
Authors
Dates
2017-09-21—Published
2016-04-04—Filed