FIELD: chemistry.
SUBSTANCE: before beginning growth process germanium melt is kept in crucible at temperature of melting for 1-2 h. After that, growing germanium monocrystals in crystallographic directions [111] or [100] is realised with overcooling at crystallisation front within 0.5-1.0K, rate of radial growth not higher than 0.5 mm/min and temperature gradient at crystallisation front within 3.0-10.0 K/cm.
EFFECT: invention makes it possible to obtain germanium monocrystals with minimal scattering of received infrared radiation not more than 1,0-2,0 percent of received signal power.
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