METHOD FOR DETERMINING THE SUFFICIENCY OF THE DEPTH OF ION-BEAM ETCHING OF QWIP STRUCTURES Russian patent published in 2021 - IPC H01L31/18 

FIELD: microelectronics.

SUBSTANCE: invention relates to the field of microelectronics and can be used in the manufacture of matrix photosensitive elements (MPSE) on quantum wells (QWIP). The method for forming mesa-elements of matrix photosensitive elements on quantum wells includes ion etching with argon, while ion etching with argon of structures from alternating layers of Al_xGa_1-xAs at x=0.27 and layers of quantum wells from GaAs:Si to the lower contact layer GaAs n⁺, in this case, the time required for ion etching of these structures with known values of the layer thicknesses to the required depth is determined as the sum of the time of ion etching of GaAs:Si quantum well layers and Al_xGa_1-xAs layers at x=0.27, determined from the known values of the etching rate of these layers.

EFFECT: invention makes it possible to form a mesa structure on quantum wells with the provision of the necessary uniformity of the etching depth of the structure to the lower GaAs n⁺ contact layer.

1 cl, 2 dwg